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is42s32400f.rs
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/// ISI IS42S32400F SDRAM
#[allow(unused)]
/// Speed Grade 6
pub mod is42s32400f_6 {
use crate::sdram::{SdramChip, SdramConfiguration, SdramTiming};
const BURST_LENGTH_1: u16 = 0x0000;
const BURST_LENGTH_2: u16 = 0x0001;
const BURST_LENGTH_4: u16 = 0x0002;
const BURST_LENGTH_8: u16 = 0x0004;
const BURST_TYPE_SEQUENTIAL: u16 = 0x0000;
const BURST_TYPE_INTERLEAVED: u16 = 0x0008;
const CAS_LATENCY_2: u16 = 0x0020;
const CAS_LATENCY_3: u16 = 0x0030;
const OPERATING_MODE_STANDARD: u16 = 0x0000;
const WRITEBURST_MODE_PROGRAMMED: u16 = 0x0000;
const WRITEBURST_MODE_SINGLE: u16 = 0x0200;
/// Is42s32400f with Speed Grade 6
#[derive(Clone, Copy, Debug, PartialEq)]
pub struct Is42s32400f6 {}
impl SdramChip for Is42s32400f6 {
/// Value of the mode register
const MODE_REGISTER: u16 = BURST_LENGTH_1
| BURST_TYPE_SEQUENTIAL
| CAS_LATENCY_3
| OPERATING_MODE_STANDARD
| WRITEBURST_MODE_SINGLE;
/// Timing Parameters
const TIMING: SdramTiming = SdramTiming {
startup_delay_ns: 100_000, // 100 µs
max_sd_clock_hz: 100_000_000, // 100 MHz
refresh_period_ns: 15_625, // 64ms / (4096 rows) = 15625ns
mode_register_to_active: 2, // tMRD = 2 cycles
exit_self_refresh: 7, // tXSR = 70ns
active_to_precharge: 4, // tRAS = 42ns
row_cycle: 6, // tRC = 60ns
row_precharge: 2, // tRP = 18ns
row_to_column: 2, // tRCD = 18ns
};
/// SDRAM controller configuration
const CONFIG: SdramConfiguration = SdramConfiguration {
column_bits: 8,
row_bits: 12,
memory_data_width: 32, // 32-bit
internal_banks: 4, // 4 internal banks
cas_latency: 3, // CAS latency = 3
write_protection: false,
read_burst: true,
read_pipe_delay_cycles: 0,
};
}
}