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35 changes: 35 additions & 0 deletions
35
examples/semiconductor/semiconductor-ui/api/data_and_knowledge.py
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from __future__ import annotations | ||
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from pathlib import Path | ||
from typing import TYPE_CHECKING | ||
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from dotenv import load_dotenv | ||
import yaml | ||
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if TYPE_CHECKING: | ||
from openssa.core.programming.hierarchical.plan import HTPDict | ||
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load_dotenv() | ||
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EXPERT_KNOWLEDGE_FILE_PATH: Path = Path(__file__).parent / 'expert-knowledge.txt' | ||
with open(file=EXPERT_KNOWLEDGE_FILE_PATH, | ||
buffering=-1, | ||
encoding='utf-8', | ||
errors='strict', | ||
newline=None, | ||
closefd=True, | ||
opener=None) as f: | ||
EXPERT_KNOWLEDGE: str = f.read() | ||
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EXPERT_PROGRAM_SPACE_FILE_PATH: Path = Path(__file__).parent / 'expert-program-space.yml' | ||
with open(file=EXPERT_PROGRAM_SPACE_FILE_PATH, | ||
buffering=-1, | ||
encoding='utf-8', | ||
errors='strict', | ||
newline=None, | ||
closefd=True, | ||
opener=None) as f: | ||
EXPERT_PROGRAM_SPACE: dict[str, HTPDict] = yaml.safe_load(stream=f) |
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62
examples/semiconductor/semiconductor-ui/api/expert-knowledge.txt
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Etching Silicon Dioxide (SiO2): typical recipe(s) | ||
================================================= | ||
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If using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE) | ||
-------------------------------------------------------------------- | ||
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GASES & FLOW RATES: | ||
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Common gas is CHF3, often mixed with small amount of Ar and/or O2: | ||
- CHF3 provides fluorine for etching while also polymerising to provide sidewall protection, improving anisotropy | ||
- Ar helps maintain stable plasma | ||
- O2 enhances volatility of etch products | ||
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Typical starting point: | ||
- 20-50 sccm of CHF3 | ||
- 5-10 sccm of Ar | ||
- 2-5 sccm of O2 | ||
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ICP POWER: | ||
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Higher ICP power (e.g., 500-1000W) increases plasma density and etch rate | ||
BUT may also lead to more physical damage and less anisotropic profiles | ||
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RF POWER: | ||
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Lower RF power (e.g., 10-50W) provides more anisotropic profiles | ||
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PRESSURE: | ||
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Lower pressure (e.g., 5-20 mTorr) helps improve anisotropy | ||
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ETCH TIME: | ||
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You need to adjust etch time depending on desired depth and etch rate. | ||
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Remember that etch rate can vary across wafer and over time, so it's best to overestimate time and measure depth periodically. | ||
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END-POINT DETECTION: | ||
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Many RIE systems have optical emission spectroscopy (OES) or interferometry for end-point detection. | ||
These can stop etching process when desired depth is reached. | ||
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OPTIMIZATION CONSIDERATIONS: | ||
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- Etch rate | ||
- Selectivity to mask and underlying layers | ||
- Etch profile (anisotropy) | ||
- Uniformity | ||
- Physical or chemical damage | ||
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SAFETY PROCEDURES: | ||
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- Always follow safety procedures when working with plasma etching systems and handling gases | ||
- Confirm with facility and equipment manager that your planned recipe is compatible and won't cause any damage or contamination |
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examples/semiconductor/semiconductor-ui/api/expert-program-space.yml
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plan: | ||
task: |- | ||
For etching PECVD SiO2 using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE), | ||
recommend 2 good parameter sets and their relative advantages/disadvantages | ||
sub-htps: | ||
- task: |- | ||
Get typical gases used for such process and their flow rate ranges | ||
in SiO2 etching using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE) | ||
- task: |- | ||
Get typical ICP Power, RF Power and Pressure value ranges and associated trade-offs | ||
in SiO2 etching using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE) | ||
- task: |- | ||
Recommend 2 parameter sets (each including Flow Rate for each Gas, plus ICP Power, RF Power and Pressure) | ||
with analysis of their relative pros and cons. |
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